UMZ1N Datasheet, PDF (1/4 Pages) Rohm – General purpose transistor (dual transistors)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
SOT-363 Power management Dual-transistors
UMZ1N DUAL TRANSISTOR (NPN+PNP)
DESCRIPTION
Silicon epitaxial planar transistor
FEATURES
z 2SA1037AK and 2SC2412K are housed independently
in a package
z Transistor elements independent, eliminating interference
z Mounting cost and area can be cut in half
SOT-363
MARKING: Z1
Z1
TR1 MAXIMUM RATINGS Ta=25℃ unless otherwise noted
Symbol
Parameter
Value
Unit
V_CBO
Collector- Base Voltage
60
V
V_CEO
Collector-Emitter Voltage
50
V
V_EBO
Emitter-Base Voltage
7
V
I_C
Collector Current -Continuous
0.15
A
P_C
Collector Power Dissipation
0.15
W
T_J
Junction Temperature
T_stg
Storage Temperature
150
℃
-55-150
℃
TR2 MAXIMUM RATINGS Ta=25℃ unless otherwise noted
Symbol
Parameter
Value
Unit
V_CBO
Collector- Base Voltage
-60
V
V_CEO
Collector-Emitter Voltage
-50
V
V_EBO
Emitter-Base Voltage
-6
V
I_C
Collector Current -Continuous
-0.15
A
P_C
Collector Power Dissipation
0.15
W
T_J
Junction Temperature
150
℃
T_stg
Storage Temperature
-55-150
℃
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1
D,Mar,2016