UMX2N Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – DUAL TRANSISTOR (NPN+NPN)

JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate Transistors
UMX2N DUAL TRANSISTOR (NPN+NPN)
FEATURES
 Two 2SC2412 chips in a package
 Mounting possible with SOT-363 automatic mounting machines
 Transistor elements are independent, eliminating interference
 Mounting cost and area be cut in half
MARKING: X2
SOT-363
6
5
4
Absolute maximum ratings (T_a=25℃)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
Unit
60
V
50
V
7
V
150
mA
150
mW
150
℃
-55~+150
℃
Electrical Characteristics (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test conditions
V_(BR)CBO I_C=50μA, I_E=0
V_(BR)CEO I_C=1mA, I_B=0
V_(BR)EBO I_E=50μA, I_C=0
I_CBO
V_CB=60V, I_E=0
I_EBO
V_EB=7V, I_C=0
h_FE
V_CE=6V, I_C=1mA
V_CE(sat) I_C=50mA, I_B=5mA
f_T
V_CE=12V, I_E=-2mA, f=100MHz
C_ob
V_CB=12V, I_E=0, f=1MHz
1
2
3
Min Typ Max Unit
60
V
50
V
7
V
0.1
μA
0.1
μA
120
560
0.4
V
180
MHz
3.5
pF
www.cj-elec.com
1
D,Mar,2016