UMT2N Datasheet, PDF (1/4 Pages) Rohm – General purpose (dual transistors)

JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate Transistors
UMT2N DUAL TRANSISTOR (PNP+PNP)
FEATURES
Two 2SA1037AK chips in SOT-363 package
SOT-363
MARKING: T2
Absolute maximum ratings (T_a=25℃)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Value
-60
-50
-6
-150
150
833
150
-55~+150
Electrical Characteristics (T_a=25℃ unless otherwise specified)
Unit
V
V
V
mA
mW
℃/W
℃
℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test conditions
V_(BR)CBO I_C=-50μA, I_E=0
V_(BR)CEO I_C=-1mA, I_B=0
V_(BR)EBO I_E=-50μA, I_C=0
I_CBO
V_CB=-60V, I_E=0
I_EBO
V_EB=-6V, I_C=0
h_FE
V_CE=-6V, I_C=-1mA
V_CE(sat) I_C=-50mA, I_B=-5mA
f_T
V_CE=-12V, I_C=-2mA, f=100MHz
C_ob
V_CB=-12V, I_E=0, f=1MHz
Min Typ Max Unit
-60
V
-50
V
-6
V
-0.1
μA
-0.1
μA
120
560
-0.5
V
140
MHz
5
pF
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1
E,Mar,2016