UMH4N Datasheet, PDF (1/4 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – Dual Digital Transistors

JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
Digital Transistors (Built-in Resistors)
UMH4N Dual Digital Transistors (NPN+NPN)
FEATURES
z Two DTC114T chips in a package
z Mounting possible with SOT-363 automatic mounting machines
z Transistor elements are independent, eliminating interference
z Mounting cost and area be cut in half
Marking: H4
SOT-363
Absolute maximum ratings (Ta=25℃)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction temperature
T_stg
Storage Temperature
Limits
50
50
5
100
150
150
-55~+150
Units
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Imput resistor
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
f_T
R₁
Test conditions
I_C=50μA,I_E=0
I_C=1mA,I_B=0
I_E=50μA,I_C=0
V_CB=50V,I_E=0
V_EB=4V,I_C=0
V_CE=5V,I_C=1mA
I_C=10mA,I_B=1mA
V_CE=10V,I_E=-5mA,
f=100MHz
Min Typ
50
50
5
100 300
250
7
10
Max Unit
V
V
V
0.5 uA
0.5 uA
600
0.3 V
MHz
13 kΩ
www.cj-elec.com
1
D,Mar,2016