UMH15N Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – NPN Multi-Chip Built-in Resistors Transistor

JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
Digital Transistors (Built-in Resistors)
UMH15N Dual Digital Transistors (NPN+NPN)
FEATURES
zTwo DTC144T chips in a package
zTransistor elements are independent, eliminating interference
zMounting cost and area can be cut in half.
SOT-363
MARKING: H15
Absolute maximum ratings(Ta=25℃)
Parameter
Symbol
Limits
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector Power dissipation
Junction temperature
Storage temperature
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_C
P_C
Tj
Tstg
50
50
5
100
150
150
-55~150
V
V
V
mA
mW
℃
℃
Electrical characteristics (Ta=25℃)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
V_CE(sat)
h_FE
R₁
f_T
Min.
50
50
5
100
32.9
Typ Max. Unit
Conditions
V
I_C=50μA
V
I_C=1mA
V
I_E=50μA
0.5 μA
V_CB=50V
0.5 μA
V_EB=4V
0.3
V
I_C=10mA,I_B=1mA
600
V_CE=5V,I_C=1mA
47
61.1 KΩ
250
MHz V_CE=10V ,I_E=-5mA,f=100MHz
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1
D,Mar,2016