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| UMG8N Datasheet, PDF (1/4 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – Dual Digital Transistors | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
Digital Transistors (Built-in Resistors)
UMG8N Dual Digital Transistors (NPN+NPN)
SOT-353
FEATURE
z Built-In biasing resistors
z Two DTC143Z chips in one package
z Emitter(GND)-common type
z Built-in bias resistors enable the configuration of an inverter circuit
without connecting external input resistors (see inner circuit)
z The bias resistors consist of thin-film resistors with complete
isolation to allow negative biasing of the input. They also have the
advantage of completely eliminating parasitic effects
z Only the on/off conditions need to be set for operation, making the circuit design easy
APPLICATION
z Inverter circuit, Interface circuit, Driver circuit
MARKING: G8
Absolute maximum ratings (Ta=25â) (For Tr1 and Tr2 in common)
Symbol
Parameter
Value
Unit
VCC
Supply voltage
50
V
Vi
Input voltage
-5~+30
V
IO
Output current
PD
Power dissipation
100
mA
150(Total*)
mW
TJ
Junction temperature
150
Tstg
Storage temperature
-55~+150
*120mW per element must not be exceeded
Electrical Characteristics (Ta=25â) (For Tr1 and Tr2 in common)
Parameter
Symbol
Test conditions
Min
â
â
Typ
Max Unit
Input turn-on voltage
Input cut-off voltage
Output voltage
Input cut-off current
Output cut-off current
DC current gain
Input resistance
Resistance ratio
Transition frequency
Vi(on)
Vi(off)
VO(on)
Ii
IO(off)
Gi
R1
R2/R1
fT
VCC=0.3V, IO=5mA
VCC=5V, IO=100µA
IO=5mA, Ii=0.25mA
Vi =5V
VCC=50V, Vi=0
VO =5V, IO=10mA
VO =10V, IO=5mA, f =100MHz
0.5
80
3.29
8
1.3
V
V
0.3
V
1.8 mA
0.5
µA
4.7
6.11 kâ¦
10
12
250
MHz
www.cj-elec.com
1
C,Mar,2016
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