UMF5N Datasheet, PDF (1/4 Pages) Rohm – Power management (dual transistors)

JCET
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate Transistors
UMF5N DUAL TRANSISTOR (PNP+NPN)
FEATURES
z 2SA2018 and DTC144E are housed independently in a package.
z Mounting possible with SOT-363 automatic mounting machines.
z Transistor elements are independent, eliminating interference.
z Mounting cost and area be cut in half.
Marking: F5
SOT-363
Tr1 Absolute maximum ratings (Ta=25℃)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-15
-12
-6
-500
150
150
-55-150
Units
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test conditions
V_(BR)CBO I_C=-10μA, I_E=0
V_(BR)CEO I_C=-1mA, I_B=0
V_(BR)EBO I_E=-10μA, I_C=0
I_CBO
V_CB=-15V, I_E=0
I_EBO
V_EB=-6V, I_C=0
h_FE
V_CE=-2V, I_C=-10mA
V_CE(sat) I_C=-200mA, I_B=-10mA
f_T
V_CE=-2V, I_E=-10mA, f=100MHz
C_ob
V_CB=-10V, I_E=0, f=1MHz
Min
Typ Max
Unit
-15
V
-12
V
-6
V
-0.1 μA
-0.1 μA
270
680
-0.25 V
260
MHz
6.5
pF
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1
E,Mar,2016