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| UMD3N Datasheet, PDF (1/5 Pages) SeCoS Halbleitertechnologie GmbH – Multi-Chip Digital Transistor | |||
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JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
Digital Transistors (Built-in Resistors)
UMD3N DUAL DIGITAL TRANSISTOR (NPN+PNP)
FEATURES
z DTA114E and DTC114E transistors are built-in a package.
z Transistor elements are independent, eliminating interference.
z
Mounting cost and area can be cut in half.
SOT-363
MARKING:D3
Absolute maximum ratings (Ta=25â)
Parameter
Symbol
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
VCC
VIN
IO
IC(MAX)
PD*
Tj
Tstg
Note 1: 150mW per element must not be exceeded.
Electrical characteristics (Ta=25â)
Parameter
Symbol
Input voltage
VI(off)
VI(on)
Output voltage
VO(on)
Input current
II
Output current
IO(off)
DC current gain
GI
Input resistance
R1
Resistance ratio
R2/R1
Transition frequency
fT
Min.
0.5
30
7
0.8
Typ
R110
1
250
Limit
50
-10~40
50
100
150
150
-55~150
Unit
V
V
mA
mW
â
â
Max.
3
0.3
0.88
0.5
13
1.2
Unit
V
V
mA
μA
kâ¦
MHz
Conditions
VCC=5V ,IO=100µA
VO=0.3V ,IO=10mA
IO/II=10mA/0.5mA
VI=5V
VCC=50V, VI=0
VO=5V,IO=5mA
VCE=10V ,IE=-5mA,f=100MHz
www.cj-elec.com
1
F,Mar,2016
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