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| UMC4N Datasheet, PDF (1/5 Pages) Diodes Incorporated – DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
Digital Transistors (Built-in Resistors)
UMC4N Dual Digital Transistors (NPN+PNP)
FEATURES
z DTC144E and DTA114Y transistors are built-in a package
MARKING: C4
NPN DTC144E Absolute maximum ratings (T a=25â)
Parameter
Symbol
Value
Unit
Supply voltage
VCC
50
V
Input voltage
VIN
-10~40
V
Output current
IO
IC(MAX)
100
mA
100
Power dissipation
PC
150
mW
Junction temperature
Tj
150
â
Storage temperature
Tstg
-55~150
â
Electrical characteristics (Ta=25â)
Parameter
Symbol
Min.
Typ
Input voltage
VI(off)
0.5
VI(on)
Output voltage
VO(on)
Input current
Output current
II
IO(off)
DC current gain
GI
68
Input resistance
Resistance ratio
R1
32.9
47
R2/R1
0.8
1
Transition frequency
fT
250
PNP DTA114Y Absolute maximum ratings (Ta=25â)
Parameter
Supply voltage
Input voltage
Symbol
VCC
VIN
Value
Unit
-50
V
-40~ +6
V
Output current
Power dissipation
IO
IC(MAX)
PC
-70
mA
-100
150
mW
Junction temperature
Tj
Storage temperature
Tstg
150
â
-55~150
â
Max.
3
0.3
0.18
0.5
61.1
1.2
Electrical characteristics (Ta=25â)
Parameter
Symbol
Input voltage
VI(off)
VI(on)
Output voltage
VO(on)
Input current
Output current
II
IO(off)
DC current gain
GI
Input resistance
Resistance ratio
R1
R2/R1
Transition frequency
fT
Min.
-0.3
68
7
3.7
Typ
Max.
-1.4
-0.3
-0.88
-0.5
10
13
4.7
5.7
250
www.cj-elec.com
1
SOT-353
Unit
V
V
mA
μA
Kâ¦
MHz
Conditions
VCC=5V ,IO=100μA
VO=0.3V ,IO=2mA
IO/II=10mA/0.5mA
VI=5V
VCC=50V, VI=0
VO=5V,IO=5mA
VCE=10V ,IE=-5mA,f=100MHz
Unit
V
V
mA
μA
Kâ¦
Conditions
VCC=-5V ,IO=-100μA
VO=-0.3V ,IO=-1mA
IO/II=-5mA/-0.25mA
VI=-5V
VCC=-50V, VI=0
VO=-5V,IO=-5mA
MHz
VCE=-10V ,IE=5mA,f=100MHz
AF,,JMuna,r2,2001146
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