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| UMC3N Datasheet, PDF (1/5 Pages) Rohm – Power management (dual digital transistors) | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
Digital Transistors (Built-in Resistors)
UMC3N Dual Digital Transistors (NPN+PNP)
FEATURES
z DTA114E and DTC114E transistors are built-in a package
z Ideal for power switch circuits
z Mounting cost and area can be cut in half
MARKING: C3
NPN DTC114E Absolute maximum ratings (Ta=25â)
Parameter
Symbol
Supply voltage
VCC
Input voltage
VIN
Output current
IO
ICM
Power dissipation
PD
Junction temperature
Tj
Storage temperature
Tstg
Electrical characteristics (Ta=25â)
Limits
50
-10~+40
50
100
150
150
-55~150
Unit
V
V
mA
mW
â
â
Parameter
Symbol
Min
Typ
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
fT
0.5
30
7
10
0.8
1
250
Max
3
0.3
0.88
0.5
13
1.2
SOT-353
Unit
V
V
mA
μA
kâ¦
Conditions
VCC=5V ,IO=100μA
VO=0.3V ,IO=10mA
IO/II=10mA/0.5mA
VI=5V
VCC=50V, VI=0
VO=5V,IO=5mA
MHz
VCE=10V ,IE=-5mA,f=100MHz
PNP DTA114E Absolute maximum ratings (Ta=25â)
Parameter
Symbol
Limits
Supply voltage
VCC
-50
Input voltage
VIN
-40~+10
Output current
IO
-50
ICM
-100
Power dissipation
PD
150
Junction temperature
Tj
150
Storage temperature
Tstg
-55~150
Unit
V
V
mA
mW
â
â
Electrical characteristics (Ta=25â)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
Symbol
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
fT
Min
-0.5
30
7
0.8
Typ
10
1
250
Max
-3
-0.3
-0.88
-0.5
13
1.2
Unit
V
V
mA
μA
kâ¦
Conditions
VCC=-5V ,IO=-100μA
VO=-0.3V ,IO=-10mA
IO/II=-10mA/-0.5mA
VI=-5V
VCC=-50V, VI=0
VO=-5V,IO=-5mA
MHz
VCE=-10V ,IE=5mA,f=100MHz
www.cj-elec.com
1
E,Mar,2016
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