UMB4N Datasheet, PDF (1/4 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – Dual Digital Transistors

JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
Digital Transistors (Built-in Resistors)
UMB4N Dual Digital Transistors (PNP+PNP)
FEATURES
Two DTA144T chips in a package.
Marking: B4
SOT-363
Absolute maximum ratings (T_a=25℃)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_D
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Value
-50
-50
-5
-100
150
150
-55~+150
Units
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current transfer ration
Collector-emitter saturation voltage
Transition frequency
Input resistance
Symbol
Test conditions
V_(BR)CBO I_C=50μA, I_E=0
V_(BR)CEO I_C=-1mA, I_B=0
V_(BR)EBO I_E=-50μA, I_C=0
I_CBO
V_CB=-50V, I_E=0
I_EBO
V_EB=-4V, I_C=0
h_FE
V_CE =-5V, I_C=-1mA
V_CE(sat)
f_T
R₁
I_C=-10mA, I_B=-1mA
V_CE =-10V, I_C=-5mA,
f =100MHz
-
Min Typ Max Unit
-50
V
-50
V
-5
V
-500 nA
-500 nA
100
600
-0.3
V
250
MHz
7
13
KΩ
www.cj-elec.com
1
D,Mar,2016