UMB3N Datasheet, PDF (1/4 Pages) Shenzhen Jin Yu Semiconductor Co., Ltd. – General purpose transistors (dual transistors)

JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
Digital Transistors (Built-in Resistors)
UMB3N Dual Digital Transistors (PNP+PNP)
FEATURES
z Two DTA143T chips in a package
z Mounting possible with SOT-363 automatic mounting machines
z Transistor elements are independent, eliminating interference
z Mounting cost and area be cut in half
Marking: B3
SOT-363
Absolute maximum ratings(Ta=25℃)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
Junction temperature
Storage temperature
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_C
P_C
Tj
Tstg
Value
-50
-50
-5
-100
150
150
-55~150
Units
V
V
V
mA
mW
℃
℃
Electrical characteristics (Ta=25℃)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
Symb
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
V_CE(sat)
h_FE
R₁
f_T
Min
-50
-50
-5
100
3.29
Typ
4.7
250
Max
-0.5
-0.5
-0.3
600
6.11
Unit
Conditions
V
I_C=-50μA
V
I_C=-1mA
V
I_E=-50μA
μA
V_CB=-50V
μA
V_EB=-4V
V
I_C=-5mA,I_B=-0.25mA
V_CE=-5V,I_C=-1mA
KΩ
MHz VCE=-10V,IE=5mA,f=100MHz
www.cj-elec.com
1
D,Mar,2016