UMA9N Datasheet, PDF (1/4 Pages) Rohm – Digital transistor (Common Emitter Dual Transistors)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
Digital Transistors (Built-in Resistors)
UMA9N Dual Digital Transistors (PNP+PNP)
SOT-353
FEATURE
z Built-In biasing resistors
z Two DTA114E chips in one package
z Emitter(GND)-common type
z Built-in bias resistors enable the configuration of an inverter circuit
without connecting external input resistors (see inner circuit)
z The bias resistors consist of thin-film resistors with complete
isolation to allow negative biasing of the input. They also have the
advantage of completely eliminating parasitic effects
z Only the on/off conditions need to be set for operation, making the circuit design easy
APPLICATION
z Inverter circuit, Driver circuit
MARKING: A9
Absolute maximum ratings (T_a=25℃)
(For Tr1 and Tr2 in common)
Symbol
Parameter
Value
V_CC
Supply voltage
-50
V_i
Input voltage
-40~+10
I_O
Output current
-50
I_CM
Collector current
-100
P_D
Power dissipation
150(Total*)
T_J
Junction temperature
150
T_stg
Storage temperature
-55~+150
*120mW per element must not be exceeded
Electrical Characteristics (T_a=25℃)
(For Tr1 and Tr2 in common)
Parameter
Symbol
Test conditions
Min
Input turn-on voltage
Input cut-off voltage
Output voltage
Input cut-off current
Output cut-off current
DC current gain
Input resistance
Resistance ratio
Transition frequency
V_i(on)
V_i(off)
V_O(on)
I_i
I_O(off)
G_i
R₁
R₂/R₁
f_T
V_CC=-0.3V, I_O=-10mA
V_CC=-5V, I_O=-100µA
-0.5
I_O=-10mA, I_i=-0.5mA
V_i =-5V
V_CC=-50V, V_i=0
V_O =-5V, I_O=-5mA
20
7
0.8
V_O =-10V, I_O=5mA, f =100MHz
Unit
V
V
mA
mA
mW
℃
℃
Typ
Max Unit
-3
V
V
-0.3
V
-0.88 mA
-0.5 µA
10
13
kΩ
1
1.2
250
MHz
www.cj-elec.com
1
C,Mar,2016