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| UM6K1N Datasheet, PDF (1/5 Pages) Rohm – Small switching (30V, 0.1A) | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate MOSFETS
UM6K1N Dual N-channel MOSFET
V(BR)DSS
30 V
RDS(on)MAX
8Ω@4V
13Ω@2.5V
ID
100mA
SOT-363
FEATURE
1) Two 2SK3018 transistors in a package.
2) The MOS FET elements are independent, eliminating mutual interference.
3) Mounting cost and area can be cut in half.
4) Low On-resistance.
5) Low voltage drive (2.5V drive) makes this device ideal for portable equipment.
MARKING
Equivalent Circuit
MOSFET MAXIMUM RATINGS (Ta = 25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID
Continuous Drain Current
30
V
±20
V
0.1
A
PD
Power Dissipation
0.15
W
RθJA
Thermal Resistance from Junction to Ambient
833
TJ
Junction Temperature
150
â /W
â
Tstg
Storage Temperature
-55~+150 â
www.cj-elec.com
1
F,Mar,2016
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