TSC1417 Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TO-92 Plastic-Encapsulate Transistors

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TSC1417 TRANSISTOR (NPN)
FEATURES
z General Purpose Switching and Amplification.
TO – 92
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
20
15
3
30
625
200
150
-55~+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
V_{BE (sat)}
f_T
Test conditions
I_C= 0.1mA,I_E=0
I_C=1mA,I_B=0
I_E=0.1mA,I_C=0
V_CB=10V,I_E=0
V_EB=2V,I_C=0
V_CE=6V, I_C=1mA
I_C=10mA,I_B=1mA
I_C=10mA,I_B=1mA
VCE=6V,IC=1mA
Min Typ Max Unit
20
V
15
V
3
V
1
μA
1
μA
29
270
0.5
V
1.42
V
300
MHz
CLASSIFICATION OF h_FE
RANK
D
RANGE
29-45
E
39-60
F
54-80
G
72-108
H
97-146
I
132-198
J
180-270
www.cj-elec.com
1
C,Dec,2015