TP857LED03 Datasheet, PDF (1/4 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – WBFBP-03E Plastic-Encapsulate Transistors

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03E Plastic-Encapsulate Transistors
TP857LED03 TRANSISTOR (PNP)
FEATURE
 Low Current
 Low Voltage
 Ultra Small SMD Plastic Package
 Complementary to TP847LED03
 For General-purpose Switching and Amplification
MARKING: D2
D2
WBFBP-03E
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RΘJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Value
-50
-45
-6
-100
100
1250
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE*
VCE(sat)1*
VCE(sat)2*
VBE(sat)1*
VBE(sat)2*
VBE1*
VBE2*
fT
Cob
Noise figure
NF
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
Test condition
IC=-10µA, IE=0
IC=-10mA, IB=0
IE=-10µA, IC=0
VCB=-30V, IE=0
VEB=-5V, IC=0
VCE=-5V, IC=-2mA
IC=-10mA, IB=-0.5mA
IC=-100mA, IB=-5mA
IC=-10mA, IB=-0.5mA
IC=-100mA, IB=-5mA
VCE=-5V, IC=-2mA
VCE=-5V, IC=-10mA
VCE=-5V,IC=-10mA,f=100MHz
VCB=-10V, IE=0, f=1MHz
VCE=-5V, IE=-0.2mA, f=1kHz,
RS=1kΩ,B=200Hz
Min
-50
-45
-6
220
100
Typ Max
-15
-15
475
-0.2
-0.4
-0.7
-0.9
-0.7
-0.77
2.5
Unit
V
V
V
nA
nA
V
V
V
V
V
V
MHz
pF
10
dB
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