TP856LED03 Datasheet, PDF (1/4 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – WBFBP-03E Plastic-Encapsulate Transistors

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03E Plastic-Encapsulate Transistors
TP856LED03
TRANSISTOR (PNP)
FEATURE
 Low Current
 Low Voltage
 Ultra Small SMD Plastic Package
 For General-purpose Switching and Amplification
WBFBP-03E
MARKING: D1
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RΘJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Value
-80
-65
-5
-100
100
1250
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
I_CEO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Cob
Test condition
IC=-10µA, IE=0
IC=-10mA, IB=0
IE=-1µA, I C=0
VCB=-70V, IE=0
V_CE= -60 V , I_B=0
VEB=-5V, IC=0
VCE=-5V, IC=-2mA
IC=-100mA, IB=-5mA
C=-100mA, IB=-5mA
VCE=-5V,IC=-10mA,f=100MHz
VCB=-10V, IE=0, f=1MHz
Min Typ Max
-80
-65
-5
-0.1
-1
-0.1
220
475
-0.5
- 1.1
100
4.5
Unit
V
V
V
uA
uA
uA
V
V
MHz
pF
www.cj-elec.com
1
A-2,Nov,2016