TP847LED03 Datasheet, PDF (1/4 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – WBFBP-03E Plastic-Encapsulate Transistors

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03E Plastic-Encapsulate Transistors
TP847LED03 TRANSISTOR (NPN)
FEATURE
 Low Current
 Low Voltage
 Ultra Small SMD Plastic Package
 Complementary to TP857LED03
 For General-purpose Switching and Amplification
MARKING: D5
D5
WBFBP-03E
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RΘJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Value
50
45
6
100
100
1250
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE*
VCE(sat)1*
VCE(sat)2*
VBE(sat)1*
VBE(sat)2*
VBE1*
VBE2*
fT
Cob
Noise figure
NF
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
Test condition
IC=10µA, IE=0
IC=10mA, IB=0
IE=10µA, IC=0
VCB=30V, IE=0
VEB=5V, IC=0
VCE=5V, IC=2mA
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
VCE=5V, IC=2mA
VCE=5V, IC=10mA
VCE=5V,IC=10mA,f=100MHz
VCB=10V, IE=0, f=1MHz
VCE=5V, IE=0.2mA, f=1kHz,
RS=1kΩ,B=200Hz
Min Typ Max
50
45
6
15
15
220
475
0.2
0.4
0.7
0.9
0.7
0.77
100
2.5
10
Unit
V
V
V
nA
nA
V
V
V
V
V
V
MHz
pF
dB
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