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TK3906LED03 Datasheet, PDF (1/5 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – WBFBP-03E Plastic-Encapsulate Transistors
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03E Plastic-Encapsulate Transistors
TK3906LED03 TRANSISTOR (PNP)
FEATURE
 Ultra Small SMD Plastic Package
 Epitaxial Planar Die Construction
 Complementary to TK3904LED03
 Available in Lead Free Version
APPLICATION
 General-Purpose Amplification and Switching Transistor for
Portable Equipment :( i.e. Mobile phone, MP3, MD, CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING: 3N
WBFBP-03E
1. BASE
2. EMITTER
3. COLLECTOR
Top View
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RΘJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICEX
IEBO
hFE(1)
hFE(2)
hFE(3)
hFE(4)
hFE(5)
VCE(sat)1
Test condition
IC=-10µA, IE=0
IC=-1mA, IB=0
IE=-10µA, IC=0
VCE=-30V, VEB(off)=-3V
VEB=-5V, IC=0
VCE=-1V, IC=-0.1mA
VCE=-1V, IC=-1mA
VCE=-1V, IC=-10mA
VCE=-1V, IC=-50mA
VCE=-1V, IC=-100mA
IC=-10mA, IB=-1mA
Value
-40
-40
-5
-200
100
1250
150
-55~+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
Min Typ Max Unit
-40
V
-40
V
-5
V
-50
nA
-100
nA
60
80
100
300
60
30
-0.25
V
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