TIP42CF Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Transistors
TIP42CF TRANSISTOR (PNP)
FEATURES
TO-220F
 Large current capacitance
 Complementary NPN Types:TIP41CF
APPLICATIONS
 Medium power linear switching applications
MAXIMUM RATINGS ( T_a=25℃ unless otherwise noted )
Collector-Base Voltage
Parameter
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
1. BASE
2. COLLECTOR
3. EMITTER
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Limit
-100
-100
-5
-6
2
62.5
150
-55~+150
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V(BR)CBO IC=-1mA,IE=0
Collector-emitter Sustaining voltage
VCEO(SUS)* IC=-30mA,IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=-1mA,IC=0
Collector cut-off current
ICBO
VCB=-100V,IE=0
Collector cut-off current
ICEO
VCE=-60V,IB=0
Emitter cut-off current
IEBO
VEB=-5V,IC=0
DC current gain
hFE(1)
hFE(2)
VCE=-4V, IC=-0.3A
VCE=-4V, IC=-3A
Collector-emitter saturation voltage
VCE(sat)
IC=-6A,IB=-0.6A
Base-emitter voltage
VBE
VCE=-4V, IC=-6A
Transition frequency
fT
VCE=-10V,IC=-0.5A
Notes: Pulse Test : Pulse Width≤300µs, duty cycle ≤2%.
Min
Typ
-100
-100
-5
30
15
3
Unit
V
V
V
A
W
℃/W
℃
℃
Max Unit
V
V
V
-400 μA
-700 μA
-1
mA
75
-1.5
V
-2
V
MHz
www.cj-elec.com
1
A,Feb,2015