TIP42 Datasheet, PDF (1/3 Pages) Power Innovations Ltd – PNP SILICON POWER TRANSISTORS

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate Transistors
TIP42/42A/42B/42C TRANSISTOR (PNP)
FEATURES
z Medium Power Linear Switching Applications
z Complement to TIP41/41A/41B/41C
TO-220-3L
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
TIP42 TIP42A TIP42B TIP42C Unit
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Collector-Base Voltage
-40
-60
-80
Collector-Emitter Voltage
-40
-60
-80
Emitter-Base Voltage
-5
Collector Current -Continuous
-6
Collector Power Dissipation
2
Junction Temperature
150
Storage Temperature Range
-55to+150
-100
V
-100
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
Min
Max
Collector-base breakdown voltage
TIP42
TIP42A
TIP42B
TIP42C
V_(BR)CBO
I_C= -1mA, I_E=0
-40
-60
-80
-100
Collector-emitter breakdown voltage TIP42
-40
TIP42A _{V(BR)CEO* IC= -30mA, IB=0}
-60
TIP42B
-80
TIP42C
-100
Emitter-base breakdown voltage
V_(BR)EBO I_E= -1mA, I_C=0
-5
Collector cut-off current
TIP42
V_CB=-40V, I_E=0
TIP42A
TIP42B
I_CBO
V_CB=-60V, I_E=0
V_CB=-80V, I_E=0
-0.4
TIP42C
V_CB=-100V, I_E=0
Collector cut-off current
TIP42/42A
TIP42B/42C
I_CEO
V_CE= -30V, I_B= 0
V_CE= -60V, I_B= 0
-0.7
Emitter cut-off current
I_EBO
V_EB=-5V, I_C=0
-1
DC current gain
h_FE(1)
V_CE=-4V, I_C=-0.3A
30
h_FE(2)
V_CE=-4 V, I_C= -3A
15
75
Collector-emitter saturation voltage
V_CE(sat) I_C=-6A, I_B=-0.6A
-1.5
Base-emitter voltage
V_BE
V_CE=-4V, I_C=-6A
-2
Transition frequency
*_{Pulse test}
f_T
V_CE=-10V,I_C=-0.5
3
Unit
V
V
V
mA
mA
mA
V
V
MH_Z
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1
C,Nov,2014