TIP32CF Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – TRIPLE DIFFUSED PNP TRANSISTOR(GENERAL PURPOSE)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Transistors
TIP32CF TRANSISTOR (PNP)
FEATURES
TO-220F
 Large current capacitance
 Complementary NPN Types:TIP31CF
APPLICATIONS
 Medium power linear switching applications
MAXIMUM RATINGS ( T_a=25℃ unless otherwise noted )
Collector-Base Voltage
Parameter
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
1. BASE
2. COLLECTOR
3. EMITTER
1₂₃
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Limit
-100
-100
-5
-3
2
62.5
150
-55~+150
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V(BR)CBO IC=-1mA,IE=0
Collector-emitter Sustaining voltage
VCEO(SUS)* IC=-30mA,IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=-1mA,IC=0
Collector cut-off current
ICBO
VCB=-100V,IE=0
Collector cut-off current
ICEO
VCE=-60V,IB=0
Emitter cut-off current
IEBO
VEB=-5V,IC=0
DC current gain
hFE(1)
hFE(2)
VCE=-4V, IC=-1A
VCE=-4V, IC=-3A
Collector-emitter saturation voltage
VCE(sat) IC=-3A,IB=-0.375A
Base-emitter voltage
VBE
VCE=-4V, IC=-3A
Transition frequency
fT
VCE=-10V,IC=-0.5A
Notes: Pulse Test : Pulse Width≤300µs, duty cycle ≤2%.
Min
Typ
-100
-100
-5
25
15
3
Unit
V
V
V
A
W
℃/W
℃
℃
Max Unit
V
V
V
-200 μA
-300 μA
-1
mA
75
-1.2
V
-1.8
V
MHz
www.cj-elec.com
1
B,May,2016