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| TIP31 Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(3A,40-100V,40W) | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate Transistors
TIP31/31A/31B/31C TRANSISTOR (NPN)
FEATURES
Medium Power Linear Switching Applications
TO-220-3L
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
TIP31
VCBO Collector-Base Voltage
40
VCEO Collector-Emitter Voltage
40
VEBO Emitter-Base Voltage
IC
Collector Current
PC
Collector Power Dissipation
RθJA Thermal Resistance from Junction to Ambient
Tj
Junction Temperature
Tstg
Storage Temperature
TIP31A TIP31B
60
80
60
80
5
3
2
62.5
150
-55~+150
ELECTRICAL CHARACTERISTICS (Ta=25â unless other wise specified)
Parameter
Symbol Test conditions
TIP31C
100
100
Min
Unit
V
V
V
A
W
â
â
M ax
Collector-base breakdown voltage
TIP31
40
TIP31A
60
TIP31B V(BR)CBO
IC= 1mA, IE=0
80
TIP31C
100
Collector-emitter breakdown voltage * TIP31
40
TIP31A
TIP31B
VCEO(sus)
IC= 30mA, IB=0
60
80
TIP31C
100
Emitter-base breakdown voltage
V(BR)EBO
IE= 1mA, IC=0
5
Collector cut-off current
TIP31
VCB=40V, IE=0
TIP31A
ICBO
TIP31B
VCB=60V, IE=0
VCB=80V, IE=0
200
TIP31C
VCB=100V, IE=0
Collector cut-off current
TIP31/31A
ICEO
VCE= 30V, IB= 0
0.3
TIP31B/31C
VCE= 60V, IB= 0
Emitter cut-off current
IEBO
VEB=5V, IC=0
1
DC current gain
hFE(1)
hFE(2)
VCE= 4V, IC= 1A
VCE=4 V, IC= 3A
25
15
75
Collector-emitter saturation voltage
VCE(sat)
IC=3A, IB=0.375A
1.2
Base-emitter voltage
VBE(on)
VCE= 4V, IC=3A
1.8
Transition frequency
fT
VCE=10V , IC=0.5A
3
* Pulse Test: PWâ¤300µs, Duty Cycleâ¤2%.
www.cj-elec.com
1
Unit
V
V
V
μA
mA
mA
V
V
MHz
E,Nov,2014
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