TIP147 Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – Darlington Transistor (PNP)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate Transistors
TIP147 ^{Darlington Transistor (PNP)}
TO-220-3L
FEATURES
 Monolithic Darlington Configuration
 Integrated Antiparallel Collector-Emitter Diode
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
1.BASE
2.COLLECTOR
3.EMITTER
1₂₃
Value
-100
-100
-5
-10
2
62.5
150
-55~+150
Unit
V
V
V
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ Max
Collector-base breakdown voltag
V_(BR)CBO
I_C=-1mA, I_E=0
-100
Collector-emitter sustaining voltage
V_CEO(sus)* I_C=-30mA,I_B=0
-100
Emitter-base breakdown voltage
V_(BR)EBO
I_E=-10mA,I_C=0
-5
Collector cut-off current
I_CBO
V_CB=-100V,I_E=0
-1
Collector cut-off current
I_CEO
V_CE=-50V,I_C=0
-2
Emitter cut-off current
I_EBO
V_EB=-5V,I_C=0
-2
DC current gain
h_FE（₁）
h_FE（₂）
V_CE=-4V, I_C=-5A
V_CE=-4V, I_C=-10A
1000
50
V_CE(sat)(1) I_C=-5A,I_B=-10mA
-2
Collector-emitter saturation voltage
V_CE(sat)(2) I_C=-10A,I_B=-40mA
-3
Base-emitter voltage
V_BE
V_CE=-4V, I_C=-10A
-3
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
Unit
V
V
V
mA
mA
mA
V
V
V
www.cj-elec.com
1
A-2,May,2016