TIP112 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate Transistors
TIP112 DARLINGTON TRANSISTOR (NPN)
FEATURES
z High DC Current Gain : h_FE=1000 @ V_CE=4V, I_C=1A(Min.)
z Low Collector-Emitter Saturation Voltage
z Industrial Use
TO-220-3L
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
Unit
100
V
100
V
5
V
2
A
2
W
150
℃
-55 to +150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Symbol Test conditions
V_(BR)CBO I_C=10mA,I_E=0
V_(BR)CEO I_C=30mA,I_B=0^(SUS)
V_(BR)EBO I_E=10mA,I_C=0
I_CEO
V_CE=50V,I_B=0
I_CBO
V_CB=100V,I_E=0
I_EBO
V_EB=5V,I_C=0
h_FE(1) V_CE=4V,I_C=1A
h_FE(2) V_CE=4V,I_C=2A
V_CE(sat) I_C=2A,I_B=8mA
V_BE
V_CE=4V,I_C=2A
C_ob
V_CB=10V,I_E=0,f=0.1MHz
Min Typ
100
100
5
1000
500
Max Unit
V
V
V
2
mA
1
mA
2
mA
2.5
V
2.8
V
100
pF
www.cj-elec.com
1
B,Oct,2014