STD123S Datasheet, PDF (1/4 Pages) AUK corp – NPN Silicon Transistor

JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
STD123S TRANSISTOR (NPN)
SOT-23
FEATURES
z Low saturation medium current application
z Extremely low collector saturation voltage
z Suitable for low voltage large current drivers
z High DC current gain and large current capability
z Low on resistance : R_ON=0.6Ω(Max.) (I_B=1mA)
1. BASE
2. EMITTER
3. COLLECTOR
Marking:123
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
20
VCEO Collector-Emitter Voltage
15
VEBO Emitter-Base Voltage
6.5
IC
Collector Current
1
PC
Collector Power Dissipation
350
RΘJA Thermal Resistance From Junction To Ambient
357
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55～+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
On resistance
Symbol Test conditions
Min
V _{(BR) CBO} I_C=50μA, I_E=0
20
V _{(BR) CEO} I_C =1mA, I_B=0
15
V _{(BR) EBO} I_E= 50μA, I_C=0
6.5
I_CBO
V_CB= 20 V, I_E=0
I_EBO
V_EB= 6V, I_C=0
h_FE
V_CE=1V, I_C= 100mA
150
V_CE (sat) I_C=500mA, I_B= 50mA
f_T
V_CE=5V, I_C=50mA
Cob
V_CB=10V, I_E=0, f=1MHz
f=1KHz,I_B=1mA,
R_ON
V_IN=0.3V
Typ
260
5
0.6
Max Unit
V
V
V
0.1
μA
0.1
μA
0.3
V
MHz
pF
Ω
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CA,JOucnt,2014