STC128 Datasheet, PDF (1/3 Pages) AUK corp – NPN Silicon Transistor

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
STC128 TRANSISTOR (NPN)
FEATURES
z Low Saturation Medium Current Application
z Extremely Low Collector Saturation Voltage
z Suitable for Low Voltage Large Current Drivers
z High DC Current Gain and Large Current Capability
TO – 92
1.EMITTER
2.COLLECTOR
3.BASE
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_ΘJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
20
15
6.5
1
625
200
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test conditions
V_(BR)CBO I_C=50μA, I_E=0
V_(BR)CEO I_C=1mA, I_B=0
V_(BR)EBO I_E=50μA, I_C=0
I_CBO
V_CB=20V, I_E=0
I_EBO
h_FE
V_CE(sat)
f_T
V_EB=6V, I_C=0
V_CE=1V, I_C=100mA
I_C=500mA, I_B=50mA
V_CE=5V,I_C=50mA
C_ob
V_CB=10V, I_E=0, f=1MHz
Min
Typ
Max Unit
20
V
15
V
6.5
V
0.1
μA
0.1
μA
150
0.3
V
260
MHz
5
pF
www.cj-elec.com
1
C,Dec,2015