STB1277 Datasheet, PDF (1/3 Pages) AUK corp – PNP Silicon Transistor

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
STB1277
TRANSISTOR (PNP)
FEA TURES
z Audio power amplifier
z High current application
z High current : I_C= -2A
z Complementary pair with STD1862
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol Para
meter
V_CBO
Collector-Base Voltage
V_CEO
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current -Continuous
P_C
Collector Power Dissipation
T_J
Junction Temperature
T_stg
Storage Temperature
Value
-30 V
-30 V
-5
-2
625
150
-55-150
Unit
V
A
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter on voltage
Transition frequency
Collector Output Capacitance
Symbol
Test conditions
Min
Typ
V_CBO
I_C= -= 100uA, I_E 0 -30
V_CEO
I_C= = -1mA , I_B 0 -30
V_EBO
= I_E= -1mA, I_C 0 -5
I_CBO
V_C= _B= -30 V, I_E 0
I_EBO = V_EB= -5V, I_C 0
h_FE
V_CE=-2V, I_C= -500mA
100
V_CE(sat)
I_C=-2A, I_B= -0.2A
V_BE(on)
V_CE=-2V, I_C= -500mA
f_T
V_CE= -5V, I_C= -50mA
170
Cob
VCB^=-10V,IE^=0,f=1MHZ
48
Max
-0.1
-0.1
320
-0.8
-1
Unit
V
V
V
uA
uA
V
V
MHz
pF
CLASSIFICATION h_FE
Rank
Ra nge
O
100-200
Y
160-320
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1
C,Dec,2015