SS8050LT1 Datasheet, PDF (1/2 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR（ NPN ）

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate Transistors
SS8050LT1 TRANSISTOR NPN
FEATURES
SOT 23
1. BASE
2. EMITTER
3. COLLECTOR
Power dissipation
P_CM : 0.3
Collector current
W Tamb=25
I_CM : 1.5
A
Collector-base voltage
V_(BR)CBO : 40
V
Operating and storage junction temperature range
T_J T_stg: -55 to +150
ELECTRICAL CHARACTERISTICS Tamb=25
Parameter
Symbol
unless otherwise specified
Test conditions
MIN
TYP
Unit : mm
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic= 100 A IE=0
40
V
Collector-emitter breakdown voltage
V(BR)CEO
Ic= 0.1mA IB=0
25
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100 A IC=0
5
V
Collector cut-off current
ICBO
VCB=40 V , IE=0
0.1
A
Collector cut-off current
ICEO
VCB=20V , IE=0
0.1
A
Emitter cut-off current
IEBO
VEB= 5V , IC=0
0.1
A
DC current gain
hFE(1)
VCE=1V, IC= 100m A
120
350
hFE(2)
VCE=1V, IC= 800mA
40
Collector-emitter saturation voltage
VCE(sat) IC=800 mA, IB= 80m A
0.5
V
Base-emitter saturation voltage
Transition frequency
CLASSIFICATION OF hFE₍₁₎
VBE(sat) IC=800 mA, IB= 80m A
fT
VCE=10V, IC= 50mA
100
f=30MHz
1.2
V
MHz
DEVICE MARKING:
8050LT1=Y1