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| SS8050 Datasheet, PDF (1/4 Pages) Wing Shing Computer Components – TRANSISTOR (NPN) | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
SOT-323 Plastic-Encapsulate Transistors
SS8050 TRANSISTOR (NPN)
FEATURES
Complimentary to SS8550
MARKING: Y1
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
40
VCEO Collector-Emitter Voltage
25
VEBO Emitter-Base Voltage
5
IC
Collector Current
1.5
PC
Collector Power Dissipation
250
RÎJA Thermal Resistance From Junction To Ambient
500
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55ï½+150
Unit
V
V
V
A
mW
â/W
â
â
SOT-323
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Collector-base breakdown voltage
V(BR)CBO IC= 100μA, IE=0
40
Collector-emitter breakdown voltage
V(BR)CEO IC= 0.1mA, IB=0
25
Emitter-base breakdown voltage
V(BR)EBO IE=100μA, IC=0
5
Collector cut-off current
ICBO
VCB=40V, IE=0
Collector cut-off current
ICEO
VCE=20V, IE=0
Emitter cut-off current
IEBO
VEB= 5V, IC=0
DC current gain
hFE(1)
VCE=1V, IC= 100mA
120
hFE(2)
VCE=1V, IC= 800mA
40
Collector-emitter saturation voltage
VCE(sat) IC=800mA, IB= 80mA
Base-emitter saturation voltage
Transition frequency
VBE(sat) IC=800mA, IB= 80mA
VCE=10V, IC= 50mA,
fT
100
f=30MHz
Collector output capacitance
Cob
VCB=10V,IE=0,f=1MHz
Typ
Max Unit
V
V
V
0.1
μA
0.1
μA
0.1
μA
400
0.5
V
1.2
V
MHz
15
pF
CLASSIFICATION OF hFE(1)
Rank
Range
L
120-200
H
200-350
J
300-400
www.cj-elec.com
1
AB,JSuenp,,22001144
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