SD101CWS Datasheet, PDF (1/4 Pages) Guangdong Kexin Industrial Co.,Ltd – SURFACE MOUNT SCHOTTKY BARRIER DIODE

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-323 Plastic-Encapsulate Diodes
SD101CWS
SCHOTTKY BARRIER DIODE
FEATURES
z Low Forward Voltage Drop
z Guard Ring Construction for Transient Protection
z Negligible Reverse Recovery Time
MARKING: S3
SOD-323
+
S3
S3
The marking bar indicates the cathode
Solid dot = Green molding compound device,if none, the normal device.
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
Parameter
Symbol
Value
Peak Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V_RRM
V_RWM
40
V_R
RMS Reverse Voltage
V_R(RMS)
28
Forward Continuous Current
I_FM
15
Non-Repetitive Peak Forward Surge Current @t=.8 .3ms
I_FSM
2.0
Power Dissipation
Pd
200
Thermal Resistance Junction to Ambient
R_θJA
500
Junction temperature
Tj
125
Storage Temperature
T_STG
-55~+150
Unit
V
V
mA
A
mW
℃/W
℃
℃
Electrical Ratings @Ta=25℃
Parameter
Reverse breakdown voltage
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
Symbol Min Typ
V_R
40
VF
Max Unit
V
0.39
0.90
V
IR
0.2
µA
C_T
2.2
pF
t_rr
1.0
ns
Conditions
IR=10µA
I_F=1.0mA
I_F=15mA
V_R=30V
VR=0V,f=1.0MHz
I_F=I_R=5mA
Irr=0.1XI_R,R_L=100Ω
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1
D,Mar,2015