S9018W Datasheet, PDF (1/3 Pages) Galaxy Semi-Conductor Holdings Limited – Silicon Epitaxial Planar Transistor

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
SOT-323 Plastic-Encapsulate Transistors
S9018W TRANSISTOR (NPN)
FEATURES
 Small Surface Mount Package
SOT–323
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
30
VCEO Collector-Emitter Voltage
15
VEBO Emitter-Base Voltage
5
IC
Collector Current
50
PC
Collector Power Dissipation
200
RΘJA Thermal Resistance From Junction To Ambient
625
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V(BR)CBO IC=100µA, IE=0
Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=100µA, IC=0
Collector cut-off current
ICBO
VCB=12V, IE=0
Collector cut-off current
ICEO
VCE=12V, IB=0
Emitter cut-off current
IEBO
VEB=3V, IC=0
DC current gain
hFE
VCE=5V, IC=1mA
Collector-emitter saturation voltage
VCE(sat) IC=10mA, IB=1mA
Base-emitter saturation voltage
VBE(sat) IC=10mA, IB=1mA
Transition frequency
fT
VCE=5V,IC=5mA , f=400MHz
Collector output capacitance
Cob
VCB=10V, IE=0, f=1MHz
CLASSIFICATION OF hFE
RANK
RANGE
MARKING
L
70–105
H
105–190
J8
Min
Typ
Max Unit
30
V
15
V
5
V
50
nA
100
nA
100
nA
70
190
0.5
V
1.4
V
600
MHz
2
pF
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