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| S9018M Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03B Plastic-Encapsulate Transistors
S9018M TRANSISTOR
DESCRIPTION
NPN Epitaxial Silicon Transistor
FEATURES
High Current Gain Bandwidth Product fT=1.1 GHz (Typ)
APPLICATION
AM/FM Amplifier, Local Oscillator of FM/VHF Tuner
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM,Note book PC, etc.)
C
WBFBP-03B
(1.2Ã1.2Ã0.5)
unit: mm
TOP
BE
1. BASE
C
2. EMITTER
3. COLLECTOR BACK
EB
MARKING: J8
C
J8
BE
MAXIMUM RATINGS TA=25â unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
Value
30
15
5
50
150
150
-55-150
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Units
V
V
V
mA
mW
â
â
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Cobo
Test conditions
IC= 100µA, IE=0
IC= 1mA, IB=0
IE=100µA, IC=0
VCB=12V, IE=0
VCE=12V, IB=0
VEB= 3V, IC=0
VCE=5V, IC= 1mA
IC=10mA, IB= 1mA
IC=10mA, IB= 1mA
VCE=5V, IC= 5mA
f=400MHz
VCB=10V,IE=0,f=1MHz
MIN
TYP
MAX UNIT
30
V
15
V
5
V
0.05
µA
0.1
µA
0.1
µA
70
190
0.5
V
1.4
V
600
1100
MHz
2
pF
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