S9016LT1 Datasheet, PDF (1/1 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR (NPN)

JIANGSU CHANGJIANG ELECTRONICS INDUSTIAL CO., LTD
SOT-23 Plastic-Encapsulate Transistors
S9016LT1 TRANSISTOR (NPN)
FEATURES
Power dissipation
P_CM:
200 mW (Tamb=25℃)
Collector current
I_CM:
0.025 A
Collector-base voltage
V_(BR)CBO:
30 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
2. 4
1. 3
Unit: mm
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
HFE(1)
VCE(sat)
Test conditions
Ic= 100µA, IE=0
Ic= 0.1mA, IB=0
IE=100µA, IC=0
VCB=30V, IE=0
VEB= 3V, IC=0
VCE=5V, IC= 1mA
IC=10mA, IB= 1mA
MIN
TYP
30
20
5
70
MAX UNIT
V
V
V
0.1
µA
0.1
µA
200
0.3
V
Transition frequency
VCE=5V, IC= 1mA
fT
300
f=100MHz
MHz
DEVICE MARKING
S9016LT1= Y6