S9015W Datasheet, PDF (1/4 Pages) Shenzhen Jin Yu Semiconductor Co., Ltd. – TRANSISTOR(PNP)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
SOT-323 Plastic-Encapsulate Transistors
S9015W TRANSISTOR (PNP)
FEATURES
 Small Surface Mount Package
 High DC Current Gain
SOT–323
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
-50
VCEO Collector-Emitter Voltage
-45
VEBO Emitter-Base Voltage
-5
IC
Collector Current
-100
PC
Collector Power Dissipation
200
RΘJA Thermal Resistance From Junction To Ambient
625
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V(BR)CBO IC=-100µA, IE=0
Collector-emitter breakdown voltage V(BR)CEO IC=-100µA, IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=-100µA, IC=0
Collector cut-off current
ICBO
VCB=-50V, IE=0
Emitter cut-off current
IEBO
VEB=-5V, IC=0
DC current gain
hFE
VCE=-5V, IC=-1mA
Collector-emitter saturation voltage
VCE(sat) IC=-100mA, IB=-10mA
Base-emitter saturation voltage
VBE(sat) IC=-100mA, IB=-10mA
Base-emitter voltage
VBE
VCE=-5V, IC=-1mA
Transition frequency
fT
VCE=-5V,IC=-10mA , f=30MHz
Collector output capacitance
Cob
VCB=-10V, IE=0, f=1MHz
CLASSIFICATION OF hFE
RANK
RANGE
MARKING
L
200–450
H
450–1000
M6
Min
Typ
Max Unit
-50
V
-45
V
-5
V
-100
nA
-100
nA
200
1000
-0.3
V
-1
V
-0.6
-0.75
V
150
MHz
7
pF
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