S9015M Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03B Plastic-Encapsulate Transistors
S9015M TRANSISTOR
DESCRIPTION
PNP Epitaxial Silicon Transistor
FEATURES
High h_FE and good linearity
Complementary to S9014M
APPLICATION
Low Frequency, Low Noise Amplifier
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM,Note book PC, etc.)
MARKING: M7
C
C
WBFBP-03B
(1.2×1.2×0.5)
unit: mm
TOP
BE
1. BASE
2. EMITTER
3. COLLECTOR
BACK
C
C
EB
M7
BE
MAXIMUM RATINGS T_A=25℃ unless otherwise noted
Symbol
Parameter
V_CBO
Collector-Base Voltage
V_CEO
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current -Continuous
P_C
Collector Dissipation
T_J
Junction Temperature
T_stg
Storage Temperature
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless
otherwise
Value
-50
-45
-5
-0.1
0.15
150
-55-150
specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
V_BE(sat)
f_T
C_obo
NF
Test conditions
I_C= -100μA, I_E=0
I_C= -0.1mA, I_B=0
I_E=-100μA, I_C=0
V_CB=-50 V , I_E=0
V_EB= -5V , I_C=0
V_CE=-5V, I_C= -1mA
I_C=-100 mA, I_B= -10mA
I_C=-100 mA, I_B=-10mA
V_CE=-5V, I_C= -10mA
f=30MHz
V_CB=-10V,I_E=0,f=1MHz
V_CE=-5V,I_c=-0.2mA,
f=1KHz,R_S=2KΩ
MIN
-50
-45
-5
200
150
TYP
Units
V
V
V
A
W
℃
℃
MAX
-0.1
-0.1
1000
-0.3
-1
UNIT
V
V
V
μA
μA
V
V
MHz
7
pF
6
dB