S9015LT1 Datasheet, PDF (1/2 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR（ PNP ）

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
S9015LT1 TRANSISTOR PNP
FEATURES
Power dissipation
P_CM : 0.2
Collector current
W Tamb=25
I_CM : -0.1
A
Collector-base voltage
V_(BR)CBO : -50
V
Operating and storage junction temperature range
T_J T_stg: -55 to +150
SOT 23
1. BASE
2. EMITTER
3. COLLECTOR
Unit : mm
ELECTRICAL CHARACTERISTICS Tamb=25
Parameter
Symbol
unless otherwise specified
Test conditions
MIN
TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V(BR)CBO Ic= -100 A IE=0
-50
V(BR)CEO Ic= -0.1m A IB=0
-45
V(BR)EBO IE=-100 A IC=0
-5
ICBO
VCB=-50 V , IE=0
IEBO
VEB= -5V , IC=0
HFE(1)
VCE=-5V, IC= -1m A
200
VCE(sat) IC=-100 mA, IB= -10m A
VBE(sat) IC=-100 mA, IB=-10m A
VCE=-5V, IC= -10mA
fT
150
f=30MHz
V
V
V
-0.1
A
-0.1
A
1000
-0.3
V
-1
V
MHz
CLASSIFICATION OF H_FE(1)
DEVICE MARKING : S9015LT1=M6