S9015 Datasheet, PDF (1/4 Pages) Weitron Technology – PNP General Purpose Transistors

JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
S9015 TRANSISTOR (PNP)
SOT-23
FEATURES
z Complementary to S9014
MARKING: M6
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
-50
VCEO Collector-Emitter Voltage
-45
VEBO Emitter-Base Voltage
-5
IC
Collector Current
-100
PC
Collector Power Dissipation
200
RΘJA Thermal Resistance From Junction To Ambient
625
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
CLASSIFICATION OF h_FE
Rank
Range
Symbol
Test conditions
V_(BR)CBO I_C= -100μA, I_E=0
V_(BR)CEO I_C = -0.1mA, I_B=0
V_(BR)EBO I_E=-100μA, I_C=0
I_CBO
V_CB=-50 V, I_E=0
I_EBO
V_EB= -5V, I_C=0
h_FE
V_CE=-5V, I_C= -1mA
V_CE(sat)
I_C=-100mA, I_B= -10mA
V_BE(sat)
I_C=-100mA, I_B=-10mA
V_CE=-5V, I_C= -10mA
f_T
f=30MHz
L
200-450
Min
Typ
Max Unit
-50
V
-45
V
-5
V
-0.1
μA
-0.1
μA
200
1000
-0.3
V
-1
V
150
MHz
H
450-1000
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