S9014M Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03B Plastic-Encapsulate Transistors
S9014M TRANSISTOR
DESCRIPTION
NPN Epitaxial Silicon Transistor
FEATURES
High h_FE and good linearity
Complementary to S9015M
APPLICATION
Pre-Amplifier, Low Level & Low Noise
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM,Note book PC, etc.)
MARKING: J6
C
C
WBFBP-03B
(1.2×1.2×0.5)
unit: mm
TOP
BE
1. BASE
2. EMITTER
3. COLLECTOR
BACK
C
C
EB
J6
BE
MAXIMUM RATINGS T_A=25℃ unless otherwise noted
Symbol
Parameter
V_CBO
Collector-Base Voltage
V_CEO
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current -Continuous
P_C
Collector Dissipation
T_J
Junction Temperature
T_stg
Storage Temperature
ELECTRICAL CHARACTERISTICS(Ta=25℃
unless
otherwise
Value
50
45
5
0.1
0.15
150
-55-150
specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_CEO
I_EBO
h_FE
V_CE(sat)
V_BE(sat)
f_T
C_obo
NF
Test conditions
I_C= 100μA, I_E=0
I_C= 0.1mA, I_B=0
I_E=100μA, I_C=0
V_CB=50 V , I_E=0
V_CE=35V , I_B=0
V_EB= 4V , I_C=0
V_CE=5V, I_C= 1mA
I_C=100 mA, I_B= 5mA
I_C=100 mA, I_B= 5mA
V_CE=5V, I_C= 10mA
V_CB=10V,I_E=0,f=1MHz
V_CE=5V,I_c=0.2mA,
MIN
TYP
50
45
5
200
150
Units
V
V
V
A
W
℃
℃
MAX
0.1
0.1
0.1
1000
0.3
1
3.5
6
UNIT
V
V
V
μA
μA
μA
V
V
MHz
pF
dB