 English |
|
|
|
|
|
|
|
| S9014 Datasheet, PDF (1/4 Pages) Weitron Technology – NPN General Purpose Transistors | |||
| |||
|
JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
S9014 TRANSISTOR (NPN)
FEATURES
z Complementary to S9015
MARKING: J6
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
50
VCEO Collector-Emitter Voltage
45
VEBO Emitter-Base Voltage
5
IC
Collector Current
100
PC
Collector Power Dissipation
200
RÎJA Thermal Resistance From Junction To Ambient
625
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55ï½+150
Unit
V
V
V
mA
mW
â/W
â
â
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol Test conditions
Min
Typ
Max Unit
Collector-base breakdown voltage
V(BR)CBO IC= 100μA, IE=0
50
V
Collector-emitter breakdown voltage
V(BR)CEO IC= 0.1mA, IB=0
45
V
Emitter-base breakdown voltage
V(BR)EBO IE=100μA, IC=0
5
Collector cut-off current
ICBO
VCB=50 V , IE=0
Collector cut-off current
ICEO
VCE=35V , IB=0
Emitter cut-off current
IEBO
VEB= 3V , IC=0
V
0.1
μA
1
μA
0.1
μA
DC current gain
hFE
VCE=5V, IC= 1mA
200
1000
Collector-emitter saturation voltage
VCE(sat)
IC=100 mA, IB= 5mA
0.3
V
Base-emitter saturation voltage
Transition frequency
CLASSIFICATION OF hFE
Rank
Range
VBE(sat)
fT
IC=100 mA, IB= 5mA
VCE=5V, IC= 10mA
f=30MHz
L
200-450
1
V
150
MHz
H
450-1000
www.cj-elec.com
1
EA,,SJeupn,20164
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese