S9013W Datasheet, PDF (1/3 Pages) Galaxy Semi-Conductor Holdings Limited – NPN Silicon Epitaxial Planar Transistor

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
SOT-323 Plastic-Encapsulate Transistors
S9013W TRANSISTOR (NPN)
FEATURES
 High Collector Current
 Excellent H_FE Linearity
SOT–323
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
40
VCEO Collector-Emitter Voltage
25
VEBO Emitter-Base Voltage
5
IC
Collector Current
500
PC
Collector Power Dissipation
200
RΘJA Thermal Resistance From Junction To Ambient
625
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V(BR)CBO IC=100µA, IE=0
Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=100µA, IC=0
Collector cut-off current
ICBO
VCB=40V, IE=0
Collector cut-off current
ICEO
VCE=20V, IB=0
Emitter cut-off current
IEBO
VEB=5V, IC=0
DC current gain
hFE
VCE=1V, IC=50mA
Collector-emitter saturation voltage
VCE(sat) IC=500mA, IB=50mA
Base-emitter saturation voltage
VBE(sat) IC=500mA, IB=50mA
Base-emitter voltage
VBE
VCE=1V, IC=10mA
Transition frequency
fT
VCE=6V,IC=20mA , f=30MHz
Collector output capacitance
Cob
VCB=6V, IE=0, f=1MHz
CLASSIFICATION OF hFE
RANK
RANGE
MARKING
L
120–200
H
200–350
J3
Min
Typ
Max Unit
40
V
25
V
5
V
100
nA
100
nA
100
nA
120
400
0.6
V
1.2
V
0.7
V
150
MHz
8
pF
J
300–400
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