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| S9013M Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
WBFBP-03B Plastic-Encapsulate Transistors
S9013M TRANSISTOR
DESCRIPTION
NPN Epitaxial Silicon Transistor
FEATURES
High Collector Current. (IC=500mA)
Complementary to S9012M
Excellent hFE linearity.
APPLICATION
150mW Output Amplifier of Potable Radios in Class
B Push-pull Operation.
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM,Note book PC, etc.)
MARKING: J3
C
C
WBFBP-03B
(1.2Ã1.2Ã0.5)
unit: mm
TOP
BE
1. BASE
C
2. EMITTER
C
3. COLLECTOR
BACK
EB
J3
BE
MAXIMUM RATINGS TA=25â unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current -Continuous
PC
Collector Dissipation
TJ
Junction Temperature
Tstg
Storage Temperature
Value
40
25
5
500
150
150
-55-150
ELECTRICAL CHARACTERISTICS(Tamb=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
Test conditions
IC= 100µA, IE=0
IC=1mA, IB=0
IE=100µA IC=0
VCB=40 V,IE=0
VCE=20V,IB=0
VEB= 5V,IC=0
VCE=1V,IC=50mA
VCE=1V,IC=500mA
IC=500mA,IB= 50mA
IC=500mA,IB= 50mA
VCE=6V, IC= 20mA
f=30MHz
VCB=6V,IE=0,f=1MHz
MIN
40
25
5
120
40
150
TYP
Units
V
V
V
mA
mW
â
â
MAX
0.1
0.1
0.1
400
UNIT
V
V
V
µA
µA
µA
0.6
V
1.2
V
MHz
8
pF
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