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| S9013 Datasheet, PDF (1/4 Pages) List of Unclassifed Manufacturers – PLASTIC ENCAPSULATE TRANSISTORS | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
SOT-23 Plastic-Encapsulate Transistors
S9013 TRANSISTOR (NPN)
SOTâ23
FEATURES
z High Collector Current.
z Complementary to S9012.
z Excellent hFE Linearity.
MARKING: J3
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
Value
VCBO
VCEO
VEBO
IC
PC
RÎJA
Tj
Tstg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
40
25
5
500
300
416
150
-55ï½+150
Unit
V
V
V
mA
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
Test conditions
V(BR)CB= O IC=0.1mA, IE 0
V(B= R)CEO IC=1mA, IB 0
V(BR)EB= O IE=0.1mA, IC 0
IC= BO VCB=40V, IE 0
IC= EO VCE=20V, IB 0
= IEBO VEB=5V, IC 0
hFE(1)
VCE== 1V, IC 50mA
hFE(2)
VC= E=1V, IC 500mA
VCE(sat) IC== 500mA, IB 50mA
VBE(sat) IC== 500mA, IB 50mA
VBE
VCB=1V,IC= 10mA,
fT
VCE=6V,IC=20mA, f=30MHz
Cob
VCB=6V, IE=0, f=1MHz
CLASSIFICATION OF hFE(1)
RANK
RANGE
L
120-200
H
200-350
1. BASE
2. EMITTER
3. COLLECTOR
Min
Typ
Max Unit
40
V
25
V
5
V
0.1
uA
0.1
uA
0.1
uA
120
400
40
0.6
V
1.2
V
0.7
V
150
MHz
8
pF
J
300-400
www.cj-elec.com
1
CA,JOucnt,2014
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