 English |
|
|
|
|
|
|
|
| S9012W Datasheet, PDF (1/4 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – SOT-323T Plastic-Encapsulate Transistors | |||
| |||
|
JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-323 Plastic-Encapsulate Transistors
S9012W TRANSISTOR (PNP)
SOT-323
FEATURES
z Complementary to S9013W
z Excellent hFE linearity
1. BASE
2. EMITTER
3. COLLECTOR
MARKING: 2T1
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
-40
VCEO Collector-Emitter Voltage
-25
VEBO Emitter-Base Voltage
-5
IC
Collector Current
-500
PC
Collector Power Dissipation
200
RÎJA Thermal Resistance From Junction To Ambient
625
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55ï½+150
Unit
V
V
V
mA
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= -100μA, IE=0
-40
Collector-emitter breakdown voltage
V(BR)CEO
IC= -1mA, IB=0
-25
Emitter-base breakdown voltage
V(BR)EBO
IE=-100μA, IC=0
-5
Collector cut-off current
ICBO
VCB=-40V, IE=0
V
V
V
-0.1 μA
Collector cut-off current
Emitter cut-off current
ICEO
VCE=-20V, IB=0
IEBO
VEB= -5V, IC=0
-0.1 μA
-0.1 μA
DC current gain
hFE
VCE=-1V, IC= -50mA
120
400
Collector-emitter saturation voltage
VCE(sat)
IC=-500mA, IB= -50mA
Base-emitter saturation voltage
Transition frequency
VBE(sat)
IC=-500mA, IB= -50mA
fT
VCE=-6V, IC= -20mA,
f=30MHz
150
Collector output capacitance
CLASSIFICATION OF hFE
Rank
Range
Cob
L
120-200
VCB=-10V,IE=0,f=1MHz
H
200-350
-0.6
V
-1.2
V
MHz
5
pF
J
300-400
www.cj-elec.com
1
CA,JSuenp,,22001144
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese