S9012M Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
WBFBP-03B Plastic-Encapsulate Transistors
S9012M TRANSISTOR
DESCRIPTION
PNP Epitaxial Silicon Transistor
FEATURES
Complementary to S9013M
Excellent h_FE linearity
APPLICATION
150mW Output Amplifier of Potable Radios in Class
B Push-pull Operation.
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM,Note book PC, etc.)
C
WBFBP-03B
(1.2×1.2×0.5)
unit: mm
TOP
1. BASE
2. EMITTER
BE
C
3. COLLECTOR
BACK
E
B
MARKING: 2T1
C
2T1
BE
MAXIMUM RATINGS T_A=25℃ unless otherwise noted
Symbol
Parameter
V_CBO
Collector-Base Voltage
V_CEO
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current -Continuous
P_C
Collector Dissipation
T_J
Junction Temperature
T_stg
Storage Temperature
ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless
otherwise
Value
-40
-25
-5
-500
150
150
-55-150
specified）
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_CEO
I_EBO
h_FE
V_CE(sat)
V_BE(sat)
f_T
C_ob
Test conditions
I_C= -100μA, I_E=0
I_C= -1mA, I_B=0
I_E=-100μA, I_C=0
V_CB=-40 V ,I_E=0
V_CE=-20V ,I_B=0
V_EB= -5V , I_C=0
V_CE=-1V, I_C=-50mA
I_C=-500mA, I_B= -50mA
I_C=-500mA, I_B= -50mA
V_CE=-6V, I_C= -20mA
f=30MHz
V_CB=-10V,I_E=0,f=1MHz
MIN
-40
-25
-5
120
150
TYP
Units
V
V
V
mA
mW
℃
℃
MAX
-0.1
-0.1
-0.1
400
-0.6
-1.2
5
UNIT
V
V
V
μA
μA
μA
V
V
MHz
pF