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| S9012 Datasheet, PDF (1/4 Pages) List of Unclassifed Manufacturers – TO-92 Plastic-Encapsulate Transistors | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
SOT-23 Plastic-Encapsulate Transistors
S9012 TRANSISTOR (PNP)
SOTâ23
FEATURES
z High Collector Current
z Complementary To S9013
z Excellent hFE Linearity
MARKING: 2T1
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
-40
VCEO Collector-Emitter Voltage
-25
VEBO Emitter-Base Voltage
-5
IC
Collector Current
-500
PC
Collector Power Dissipation
300
RÎJA Thermal Resistance From Junction To Ambient
416
Tj
Junction Temperature
150
Tstg
Storage Temperature
-55~+150
Unit
V
V
V
mA
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Cob
Test conditions
IC=-0.1mA, IE=0
IC=-1mA, IB=0
IE=-0.1mA, IC=0
VCB=-40V, IE=0
VCE=-20V, IB=0
VEB=-5V, IC=0
VCE=-1V, IC=-50mA
IC=-500mA, IB=-50mA
IC=-500mA, IB=-50mA
VCE=-6V,IC=-20mA, f=30MHz
VCB=-10V, IE=0, f=1MHz
CLASSIFICATION OF hFE
RANK
RANGE
L
120-200
H
200-350
1. BASE
2. EMITTER
3. COLLECTOR
Min
Typ
Max Unit
-40
V
-25
V
-5
V
-0.1
uA
-0.1
uA
-0.1
uA
120
400
-0.6
V
-1.2
V
150
MHz
5
pF
J
300-400
www.cj-elec.com
1
CA,JOucnt,2014
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