S9011LT1 Datasheet, PDF (1/2 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR（ NPN ）

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
S9011LT1 TRANSISTOR NPN
FEATURES
Power dissipation
P_CM : 0.2
Collector current
W Tamb=25
I_CM : 0.03 A
Collector-base voltage
V_(BR)CBO : 30
V
Operating and storage junction temperature range
T_J T_stg: -55 to +150
SOT 23
1. BASE
2. EMITTER
3. COLLECTOR
Unit : mm
ELECTRICAL CHARACTERISTICS Tamb=25
Parameter
Symbol
unless otherwise specified
Test conditions
MIN
TYP
Collector-base breakdown voltage
V(BR)CBO Ic= 100 A IE=0
30
Collector-emitter breakdown voltage
V(BR)CEO Ic= 0.1m A IB=0
20
Emitter-base breakdown voltage
V(BR)EBO IE=100 A IC=0
4
Collector cut-off current
ICBO
VCB=16 V , IE=0
Collector cut-off current
Emitter cut-off current
ICEO
VCE=16V , IB=0
IEBO
VEB= 3.5V , IC=0
DC current gain
hFE(1)
VCE=5V, IC= 1m A
70
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
VCE(sat) IC=10 mA, IB= 1m A
VBE(sat) IC=10 mA, IB= 1m A
VCE=5V, IC= 1mA
fT
150
f=30MHz
MAX UNIT
V
V
V
0.1
A
0.1
A
0.1
A
200
0.3
V
1
V
MHz
DEVICE MARKING:
S9011LT1= 1T