S9011 Datasheet, PDF (1/2 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR（ NPN ）

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
S9011 TRANSISTOR NPN
FEATURE
Power dissipation
P_CM : 0.31 W Tamb=25
Collector current
I_CM: 0.03 A
Collector-base voltage
V_(BR)CBO : 30 V
Operating and storage junction temperature range
Tj, T_stg: -55 to +150
TO 92
1.EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
Collector-base breakdown voltage
V(BR)CBO Ic= 100 A IE=0
30
Collector-emitter breakdown voltage
V(BR)CEO IC= 0.1 mA , IB=0
20
Emitter-base breakdown voltage
V(BR)EBO IE= 100 A IC=0
4
Collector cut-off current
ICBO
VCB=16V , IE=0
0.1
Collector cut-off current
ICBO
VCB=16V , IE=0
0.1
Emitter cut-off current
IEBO
VEB= 3.5V, IC=0
0.1
DC current gain
hFE(1)
VCE=5V, IC=1m A
28
270
Collector-emitter saturation voltage
VCE(sat)
IC= 10 mA, IB= 1m A
0.3
Base-emitter voltage
VBE(sat)
IC= 10 mA, IB= 1m A
1
UNIT
V
V
V
A
A
A
V
V
Transition frequency
fT
VCE=5V,IC=1mA,
150
f=30MHz
MHz
CLASSIFICATION OF h_FE(1)
Rank
D
E
Range
28-45
39-60
F
54-80
G
72-108
H
97-146
I
132-198
J
180-270