S8550 Datasheet, PDF (1/4 Pages) Wing Shing Computer Components – TRANSISTOR (PNP)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
JC(T
SOT-23 Plastic-Encapsulate Transistors
SOT-23
S8550 TRANSISTOR (PNP)
FEATURES
z Complimentary to S8050
z Collector current: I_C=0.5A
1. BASE
2. EMITTER
3. COLLECTOR
MARKING : 2TY
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
Unit
-40
V
-25
V
-5
V
-0.5
A
0.3
W
150
℃
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
CLASSIFICATION OF hFE₍₁₎
Rank
Range
L
120-200
Symbol
Test conditions
V_(BR)CBO
I_C = -100μA, I_E=0
V_(BR)CEO
I_C =-1mA, I_B=0
V_(BR)EBO
I_E= -100μA, I_C=0
I_CBO
V_CB= -40V, I_E=0
I_CEO
V_CE= -20V, I_B=0
I_EBO
V_EB= -3V, I_C=0
h_FE(1)
V_CE= -1V, I_C= -50mA
h_FE(2)
V_CE= -1V, I_C= -500mA
V_CE(sat)
I_C=-500mA, I_B= -50mA
V_BE(sat)
f_T
I_C=-500mA, I_B= -50mA
V_CE= -6V, I_C= -20mA
f=30MHz
H
200-350
Min
-40
-25
-5
120
50
Max Unit
V
V
V
-0.1 μA
-0.1 μA
-0.1 μA
400
-0.6 V
-1.2 V
150
MHz
J
300-400
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DA,JOucnt,2014