RB751V-40 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-323 Plastic-Encapsulate Diodes
RB751V -40 Schottky Barrier Diode
FEATURES
z Low current rectifier schottky diode
z Low voltage, low inductance
z For power supply
MAKING: 5
SOD-323
The marking bar indicates the cathode
Solid dot = Green molding compound device,if none,
the normal device.
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
Parameter
Symbol
Peak reverse voltage
V_RM
DC reverse voltage
V_R
Mean rectifying current
Non-repetitive Peak Forward
Surge Current@t=8.3ms
Power dissipation
Thermal Resistance Junction to Ambient
I_O
I_FSM
P_D
R_θJA
Junction temperature
T_j
Storage temperature
T_stg
Limit
40
30
0.03
0.2
200
500
125
-55~+150
Electrical Ratings @Ta=25℃
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Symbol Min Typ
V_F
I_R
C_T
2
Max Unit
0.37 V
0.5 μA
pF
Unit
V
V
A
A
mW
℃/W
℃
℃
Conditions
I_F=1mA
V_R=30V
V_R=1V, f=1MHZ
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1
E,Mar,2015